Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1992-07-10
1994-10-11
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Bad bit
365185, 365218, G11C 700
Patent
active
053553381
ABSTRACT:
A memory redundancy circuit using FLOTOX transistors instead of conventional link fuses and thus capable of redundancy programming even after the packaging of the chip. The redundancy circuit is capable of generating spare signals in order to use spare memory cells for particular addresses. The circuit includes: a reference line having a certain voltage level for generating spare signals; a reference voltage supplying circuit for supplying the required voltage to the reference line; two or more FLOTOX transistors connected to the reference line; and high voltage driving circuits provided for the FLOTOX transistors, and connected to address lines in such a manner as to supply the required voltage to the gates of the FLOTOX transistors for programming.
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Goldstar Electron Co. Ltd.
Loudermilk Alan R.
Yoo Do Hyun
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