Method of growing large Pb.sub.1-x -Sn.sub.x -Te single crystals

Details Method of growing large Pb.sub.1-x -Sn.sub.x -Te single crystals Method of growing large Pb.sub.1-x -Sn.sub.x -Te single crystals

1976-04-22

1981-02-10

Cooper, Jack

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156619, 156DIG72, 156DIG85, 156DIG110, 252 623V, B01J 1702

Patent

active

042499879

ABSTRACT:
Large single crystals of Pb.sub.1-x -Sn.sub.x -Te are grown in a near-equilibrium condition by applying a minimal driving force such that a high degree of growth reliability is achieved. The process utilized allows the growth mechanism to take place approximately 50.degree. C. below the melting point of the charge materials. Crystals grown by this process are ultra pure and exhibit substantially improved compositional and crystallographic homogenuity throughout.

REFERENCES:
patent: 3615928 (1971-10-01), Wagner et al.
patent: 3622399 (1971-11-01), Johnson
patent: 3723190 (1973-03-01), Kruse et al.
patent: 3849205 (1974-11-01), Brau et al.

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