Semiconductor memory device with source and drain limited to are

Details Semiconductor memory device with source and drain limited to are Semiconductor memory device with source and drain limited to are

1994-02-25

1994-10-11

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257386, 437 35, H01L 2978

Patent

active

053550064

ABSTRACT:
A semiconductor memory device comprises a semiconductor substrate, a plurality of memory cells each comprised of a cell transistor having at least a pair of source and drain regions formed in the semiconductor substrate and a gate electrode formed thereon, a bit line, a bit contact for providing contact between the drain region and the bit line, a capacitor and a storage contact for providing contact between the source region and the capacitor, in which the pair of source and drain regions are disposed in limited areas near the gate electrode and independent form not sharing those in other memory cells.

REFERENCES:
patent: 4197554 (1980-04-01), Meusburger et al.
patent: 4984199 (1991-01-01), Yoneda et al.
patent: 5047359 (1991-09-01), Nagatomo

Affiliated with

Also associated with

Rating

Semiconductor memory device with source and drain limited to are does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with source and drain limited to are, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with source and drain limited to are will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1660810