Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1993-12-22

1996-07-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566451, 1566481, 1566571, 15666111, 1566621, 437225, H01L 2100

Patent

active

055408117

ABSTRACT:
To planarize the surface of a semiconductor substrate having convex and concave portions as with the case of a trench structure or a multilayer interconnection structure, a burying film is formed all over the surface of the semiconductor substrate to bury the convex portions; a stopper layer is selectively formed on the burying film at the concave portions; and the burying film is removed flatwise by mechanical polishing until the surface of the convex portion is exposed. The method can simply realize a highly precise planarized structure. Further, it is also preferable to form another stopper layer on the surfaces of the convex portions.

REFERENCES:
patent: 4662064 (1987-05-01), Hsu et al.
patent: 5077234 (1991-12-01), Scoopo et al.
patent: 5290396 (1994-03-01), Schoenborn et al.

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