Dielectric thin film and thin-film EL device using same

Details Dielectric thin film and thin-film EL device using same Dielectric thin film and thin-film EL device using same

1998-07-30

2000-03-14

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419222, 20419226, C23C 1434

Patent

active

060368233

ABSTRACT:
A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.

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R.G. Wilson et al, "Secondary Ion Mass Spectrometry", Practical Handbook for Depth Profiling and Bulk Impurity Analysis, Jun. 1989, pp. 3.1-1 -3.1-4.

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