Thin film transistor and method for fabricating the same

Details Thin film transistor and method for fabricating the same Thin film transistor and method for fabricating the same

1996-08-30

1998-07-21

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057838526

ABSTRACT:
A thin film transistor includes an insulating substrate; a polysilicon pattern formed on the insulating substrate; a first nitride layer disposed on a channel portion of the polysilicon pattern; heavily doped semiconductor layer regions disposed in upper portions of the polysilicon pattern on sides of the first nitride layer pattern; an interlevel insulating layer disposed on the insulating substrate, the polysilicon pattern, the first nitride layer and the heavily doped semiconductor layer regions, the interlevel insulating layer having a contact hole to expose a portion of the heavily doped semiconductor layer; source and drain electrodes connected to the heavily doped semiconductor layer regions through the contact hole; and a gate electrode formed on the interlevel insulating layer disposed on the first nitride layer.

REFERENCES:
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5468987 (1995-11-01), Yamazaki et al.
Kyung Ha Lee, et al., "Low Temperature Polycrystalline Silicon Thin Film Transistor with Silicon Nitride Ion Stopper", IEEE Electron Device Letters, vol. 17, No. 6, pp. 258-260, (Jun. 1996).

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