Method for producing semiconductive single crystal

Details Method for producing semiconductive single crystal Method for producing semiconductive single crystal

1989-03-14

1991-05-14

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156612, 156613, 156DIG72, 156DIG77, C30G 108, C30G 110, C30G 2302, C30G 2948

Patent

active

050153277

ABSTRACT:
A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.

REFERENCES:
patent: 4422888 (1983-12-01), Stutius
patent: 4584053 (1986-04-01), Namba et al.
patent: 4632711 (1986-12-01), Fujita et al.
patent: 4866007 (1989-09-01), Taguchi et al.
Journal of Crystal Growth, B. V. Amsterdam, "Growth of High-Quality ZnSe by MOVPE on (100) ZnSe Substrate" Jan. 1, 1988, pp. 273-278.

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