Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1996-04-18

1998-07-21

Baxter, Janet C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430319, 430330, G03C 500

Patent

active

057833699

ABSTRACT:
A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated. This reduces degassing in the event of the etching of the passivation film which immediately follows the first heat treatment.

REFERENCES:
patent: 4495220 (1985-01-01), Wolf et al.
patent: 4606998 (1986-08-01), Clodgo et al.
patent: 4705606 (1987-11-01), Young et al.
patent: 5007981 (1991-04-01), Kawasaki et al.
patent: 5191403 (1993-03-01), Nakazawa
English translation of JP 4043641 cited in the prior office action.
English abstracts of JP 4043641 cited on applicant's IDS (paper No. 2), JAPIO and CAPLUS abs., Feb. 1992.
English abstract of JP 4025047 cited on applicant's IDS, JAPIO abs., Jan. 1992.

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