Strip gate poly structure for increased channel width and reduce

Details Strip gate poly structure for increased channel width and reduce Strip gate poly structure for increased channel width and reduce

1998-11-23

2000-11-07

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257342, H01L 2976, H01L 2994

Patent

active

061440671

ABSTRACT:
A MOSgated device has a plurality of rows of closed cells which each have a laterally enlarged central base area having two narrow oppositely extending base stripes. Each cell in the row is spaced from the adjacent cell in the row, and each cell of one row is nested into the cells of an opposite row such that its enlarged central region is longitudinally located adjacent the space between the cells of the adjacent row. The polysilicon gate is a continuous sheet and permits gate current to spread both longitudinally and laterally. The invention can be carried out with planar and groove technologies.

REFERENCES:
patent: 4677452 (1987-06-01), Zommer
patent: 4833513 (1989-05-01), Sasaki
patent: 5399892 (1995-03-01), Neilson et al.
patent: 5521410 (1996-05-01), Yamamoto
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5703389 (1997-12-01), Knoch et al.

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