Semiconductor device having a capacitor with a high dielectric c

Details Semiconductor device having a capacitor with a high dielectric c Semiconductor device having a capacitor with a high dielectric c

1999-06-08

2000-11-07

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, H07L 27108

Patent

active

061440531

ABSTRACT:
A semiconductor device having a capacitor comprising an insulating layer 2 formed on a semiconductor substrate 1, a contact hole 9 disposed at a predetermined position on the insulating layer 2, a lower electrode 8 extending to the insulating layer 2 and electrically connected to the semiconductor substrate 1 through the contact hole, a dielectric film 10 formed to cover a surface of the lower electrode 8, an upper electrode 11 disposed on the dielectric film 10 so as to be opposite to the surface of the lower electrode 8 interposing the dielectric film, and a protection film 12 disposed adjacent to an end of a side surface of the lower electrode 8 for preventing the insulating layer 7 from being in contact with the dielectric film 10 at around the end, wherein the protection film is made of a material having a lattice constant same as or similar to that of the dielectric film 10, whereby it is possible to prevent deterioration of crystallization of the dielectric film to prevent a leak current in the capacitor from generating.

REFERENCES:
patent: 5418388 (1995-05-01), Okudaira et al.
patent: 5717236 (1998-02-01), Shinkawata
patent: 5796136 (1998-08-01), Shinkawata
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5828129 (1998-10-01), Roh
patent: 5838035 (1998-11-01), Ramesh

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