Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1998-11-19

2000-11-07

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438787, 438766, 438627, 438637, 438643, 438653, 438672, H01L 21469

Patent

active

061436712

ABSTRACT:
A semiconductor device manufacturing method comprises the steps of depositing a first insulation coating on a substrate, forming a wiring groove on the first insulation coating, depositing aluminum or its alloy on the wiring groove, eliminating the aluminum or its alloy deposited over the other portion than the wiring groove, depositing a second insulation coating doped with at least B or P on the substrate, depositing a third insulation coating on the second insulation coating, applying a photoresist on the third insulation coating, and exposing the photoresist to a light of short wavelength.

REFERENCES:
patent: 5795915 (1998-06-01), Matsunaga et al.

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