Method of planarizing a structure having an interpoly layer

Details Method of planarizing a structure having an interpoly layer Method of planarizing a structure having an interpoly layer

1997-09-12

2000-11-07

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438697, 438723, 438738, 438743, 216 38, H01L 2100

Patent

active

06143664&

ABSTRACT:
A method of planarizing a structure having an interpoly layer is disclosed. The method includes forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate. Next, a spin-on-glass layer is formed over the undoped silica glass layer. Finally, the spin-on-glass layer is etched back, thereby planarizing the structure having the interpoly layer.

REFERENCES:
patent: 5702980 (1997-12-01), Yu et al.
patent: 5858860 (1999-01-01), Shim et al.
patent: 5858870 (1999-01-01), Zheng et al.

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