Slurry for chemical mechanical polishing of copper

Details Slurry for chemical mechanical polishing of copper Slurry for chemical mechanical polishing of copper

1998-10-22

2000-11-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438692, 438691, 438693, H01L 2144

Patent

active

061436569

ABSTRACT:
Copper metalization is planarized by CMP employing a slurry which avoids scratching the copper surface and is highly selective to the underlying barrier layer. Embodiments include CMP a copper filled damascene opening using a slurry comprising about 0.2 to about 0.7 wt. % Al.sub.2 O.sub.3 and about 0.2 to about 2 wt. % oxalic acid to achieve a RMS no greater than about 10 .ANG..

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5960317 (1999-09-01), Jeong
patent: 6001730 (1999-09-01), Farkas et al.

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