Structure and method for controlling copper diffusion and for ut

Details Structure and method for controlling copper diffusion and for ut Structure and method for controlling copper diffusion and for ut

2000-01-26

2000-11-07

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438630, 438648, 438687, 438629, 438656, 438785, H01L 214763

Patent

active

061436410

ABSTRACT:
In accordance with one embodiment of the invention, a diffusion barrier layer is formed in a copper interconnect structure by first forming a layer of intermetal dielectric material on an underlying layer of conductive material. A pattern of dual damascene structures is then formed in the interconnect dielectric layer. An adhesion layer is then formed on exposed sidewalls of the damascene structure and on the upper surface of the intermetal dielectric material. The adhesion-layer-lined dual damascene structures are then filled with a conductive material that includes copper. The copper-including conductive material is then planarized to the upper surface of the intermetal dielectric material. Intermetal dielectric material is then removed to expose the conductive material. A diffusion barrier material is then deposited on exposed surfaces of the conductive material. Low k dielectric material is then disposed over the entire interconnect structure to fill the gaps, thus providing a low k solution and structural integrity to the interconnect.

REFERENCES:
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 6001726 (1999-12-01), Nagabushnam et al.

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