Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-10-29
2000-11-07
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438107, 438108, 438119, 228115, 228 31, 228 41, 257737, 257781, 257784, 257785, H01L 2150, H01L 2144, H01L 2348, B23K 2000, B23K 2012
Patent
active
061436399
ABSTRACT:
Methods of forming electrically conductive interconnections and electrically interconnected substrates are described. In one implementation, a first substrate having an outer surface is provided and a layer of material is formed thereover. Openings are formed within the layer of material and conductive masses are formed within the openings. A second substrate having conductive interconnect surfaces is provided. The conductive interconnect surfaces are then contacted with the conductive masses and deformed thereby. In one aspect, the interconnect surfaces are deformed in part by portions of the layer of material proximate the conductive masses. In another aspect, the layer of material is removed and the interconnect surfaces are deformed by the conductive masses themselves.
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Medlen Curtis M.
Tuttle Mark E.
Micro)n Technology, Inc.
Nguyen Ha Tran
Niebling John F.
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