Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-05-07
2000-11-07
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430316, 438383, G03F 700
Patent
active
061434744
ABSTRACT:
This method forms structures with different resistance values from a single polysilicon film formed on a substrate. Form a hard masking layer on the polysilicon film. Form a photoresist mask over the hard masking layer. Partially etch the hard masking layer through the photoresist mask to reduce the thickness of the polysilicon while leaving the remainder of the hard masking layer with the original thickness. The thickness is reduced in locations where a low resistance is to be located in the polysilicon film. Then dope the polysilicon layer through the hard masking layer with variable doping as a function of the reduced thickness and the original thickness of the hard masking layer.
REFERENCES:
patent: 4643777 (1987-02-01), Maeda
patent: 5141597 (1992-08-01), Adams et al.
patent: 5514617 (1996-05-01), Liu
patent: 5622884 (1997-04-01), Liu
patent: 5705418 (1998-01-01), Liu
Chen Sen-Fu
Shen Chih-Heng
Wang Huan-Wen
Yen Ying-Tzu
Ackerman Stephen B.
Duda Kathleen
Jones II Graham S.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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