Semiconductor memory device with improved tunneling characterist

Details Semiconductor memory device with improved tunneling characterist Semiconductor memory device with improved tunneling characterist

1992-03-03

1994-01-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257325, 257317, 365184, H01L 2968, G11C 1134

Patent

active

052784401

ABSTRACT:
A semiconductor memory is disclosed. The cell has MNOS structure, and comprises a p-type silicon substrate 27 with n type layers 21, 23, a silicon dioxide film 19 thereon, a reduced pressure SiN film 17 thereon and a polysilicon film 14 thereon. The surface of the channel region 25 has projecting portions so the semiconductor memory employing the cell, compared to that of the prior art, permits tunneling of electrons with a low programming voltage.

REFERENCES:
patent: 3805130 (1974-04-01), Yamazaki
patent: 4099196 (1978-07-01), Simko
patent: 4619034 (1986-10-01), Janning
Yatsuda et al., An Advanced MNOS Memory Device for Highly-Integrated Byte-Erasable 5V-Only EEPROMs, IEDM, p. 734, 1982.

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