Method for forming semiconductor thin film

Details Method for forming semiconductor thin film Method for forming semiconductor thin film

1992-07-29

1994-01-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437108, 437966, 437973, 437173, 148DIG1, 148DIG154, H01L 2120

Patent

active

052780937

ABSTRACT:
A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700.degree. C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200.degree. C. or higher in which a lamp light is radiated to the crystallized thin film.

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