Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-28
1994-05-31
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257328, 257335, 257338, 257370, 257378, H01L 2910, H01L 2978, H01L 2702
Patent
active
053171802
ABSTRACT:
An integrated circuit is provided wherein bipolar, CMOS and DMOS devices are merged together on one chip with fabrication taking place from a CMOS point of view rather than from a bipolar point of view as in the prior art and p-type epitaxial silicon is used as opposed to n-type epitaxial silicon in the prior art. The integrated circuit uses a P+ substrate upon which a P- epitaxial layer is formed. N+ buried regions isolate the DMOS, PMOS and NPN bipolar devices from the P-epitaxial layer. Each of the devices is formed in a N-well with a first level of polysilicon gate layer providing both the gate and masking for the backgate diffusion of the DMOS device and a sidewall oxide later formed on the first level gate layer to control the diffusion of the source and drain regions of the DMOS device to control channel length. A second level of polysilicon layer provides the gate structures for the CMOS devices as well as one plate of a capacitor. The second level of polysilicon acts as a mask for the source and drain region implants of the CMOS devices. A sidewall oxide later formed on the second polysilicon level further controls the channel lengths of the CMOS structures. A third level of polysilicon provides the second capacitor plate for the capacitor. The DMOS device is isolated from the remaining circuitry by the p-type epitaxial layer and the peripheral portion of the DMOS device is terminated by a PN junction, thereby avoiding the necessity of having a tapered field oxide.
REFERENCES:
patent: 4466176 (1984-08-01), Temple
patent: 4807023 (1989-02-01), Manocha
patent: 4912054 (1990-03-01), Tomassetti
patent: 5031019 (1991-07-01), Kosaha et al.
patent: 5032532 (1991-07-01), Mori et al.
patent: 5156989 (1992-10-01), William et al.
Erdeljac John P.
Hutter Louis N.
Brady Wade James
Carroll J.
Donaldson Richard L.
Texas Instruments Incorporated
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