Non-volatile semiconductor memory cell

Details Non-volatile semiconductor memory cell Non-volatile semiconductor memory cell

1991-09-23

1994-05-31

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257322, 257344, 257408, 257410, H01L 2968, H01L 2978, H01L 2934

Patent

active

053171799

ABSTRACT:
Disclosed is a flash EEPROM cell needing only a 5 volt external source using an on-chip voltage multiplier circuit to provide high voltages necessary to effect Fowler-Nordheim tunneling during both the program and erase modes. Properties of dielectric layers between a floating gate and a control gate and between the floating gate and a drain region differ to facilitate programming and erasing of the floating gate. Also disclosed is a method for producing a flash EEPROM cell by forming the insulative layer between a floating gate and a control gate to have a capacitance lower than the capacitance of the insulating layer between the floating gate and a drain region.

REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4412311 (1983-10-01), Miccoli et al.
patent: 4688078 (1987-08-01), Hseih
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 4794565 (1988-12-01), Wu et al.
patent: 4894802 (1990-01-01), Hsia et al.

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