Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-27
1994-05-31
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257305, 257532, 257535, H01L 2968, H01L 2978, H01L 2992
Patent
active
053171772
ABSTRACT:
A semiconductor device in which a trench-shaped groove (20) and a depression (100), which is formed by removing at least part of the area above and adjacent to the groove, are formed to be continuous on one side of the semiconductor substrate, in which aforementioned groove and aforementioned depression is buried a polysilicon conductive layer (103), the top of which conductive layer is converted into an insulator (102), the bottom of which insulating film (102) is contained in the depression (100). It is possible to form the element areas according to designs, and it is also possible to flatten the surface without wire cutting in the conductive layer.
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Boku Katsushi
Miyai Yoichi
Nagata Toshiyuki
Niuya Takayuki
Ogata Yoshihiro
Donaldson Richard L.
Hiller William E.
James Andrew J.
Matsil Ira S.
Meier Stephen D.
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