Dry etching method

Details Dry etching method Dry etching method

1992-03-18

1994-01-11

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156652, H01L 2100

Patent

active

052777570

ABSTRACT:
Proposed is a dry etching method for etching a layer of an aluminum-based material, by means of which resist selectivity and underlying layer selectivity may be improved and maintenance of an etching apparatus may be facilitated. According to the present invention, the etching process is carried out in two steps, that is, a step of removing a native oxide film present on the surface of a layer of an aluminum-based material, using a reducing compound, such as BCl.sub.3, SiCl.sub.4 or Si.sub.2 S.sub.2 Cl.sub.4 (tetrachlorocyclodisilthiane), and a subsequent step of etching the layer of the aluminum-based material using sulfur chloride such as S.sub.2 Cl.sub.2. BCl.sub.3 is reacted with residual oxygen in the apparatus to generate a large quantity of solid B.sub.2 O.sub.3, so that problems were raised in the conventional process in connection with worsened maintenance. However, BCl.sub.3 raises no problem with the present invention because it is used during only a short time period at the beginning of etching. Besides, since the reducing compound is not brought into contact with the underlying SiO.sub.2 interlayer insulating film, underlying layer selectivity is improved. In addition, since sulfur (S) dissociated from sulfur chloride into a plasma is utilized for sidewall protection in the course of etching of the layer of the aluminum-based material, incident ion energies required for anisotropic etching may be diminished and resist selectivity may be improved.

REFERENCES:
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4919748 (1990-04-01), Bredbenner et al.
"Silicon Processing For The VLSI Era"; vol. 1; by Stanley Wolfe; .COPYRGT. 1986; Lattice Press; Sunset Beach, Calif., pp. 559-563.

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