MOS inverter forming method

Details MOS inverter forming method MOS inverter forming method

1996-11-04

1998-09-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2976

Patent

active

058118594

ABSTRACT:
MOS inverter forming method within a large scale integrated circuit (LSI) for providing a pair of circuits with the same performance each of which comprise a plurality of MOS inverters serially connected from the first stage to the last stage, each the MOS inverters being provided with an input, characterized in that, the input of the MOS inverters of the first stage are adjacently positioned with facing to each other.

REFERENCES:
patent: 4503342 (1985-03-01), Adam
patent: 4961012 (1990-10-01), Nishitani
patent: 5031018 (1991-07-01), Shirato et al.
patent: 5132563 (1992-07-01), Fujii et al.
patent: 5204990 (1993-04-01), Blake et al.
patent: 5306967 (1994-04-01), Dow
patent: 5420806 (1995-05-01), Shou et al.
patent: 5631863 (1997-05-01), Fechner et al.

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