Semiconductor integrated circuit device having gate or active ar

Details Semiconductor integrated circuit device having gate or active ar Semiconductor integrated circuit device having gate or active ar

1996-03-04

1998-09-22

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257904, 257351, 257 69, H01L 2711, H01L 27092

Patent

active

058118586

ABSTRACT:
With regard to paired drive transistors, the shape of an active area is (point or line) symmetrical to a channel area in the vicinity of the channel area. With regard to paired transfer transistors, likewise, the shape of a word line is (point or line) symmetrical to the channel area in the vicinity thereof. With this structure, even if a gate electrode (word line) should be misaligned, therefore, the shapes of the channel areas of the paired transistors would become identical, so that there would be no difference between characteristics.

REFERENCES:
patent: 4724530 (1988-02-01), Dingwell
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5166763 (1992-11-01), Wada et al.
"16Mbit SRAM Cell Technologies for 2.0V Operation", H. Ohkubo et al, 1991, IEDM, pp. 17.5.1-17.5.4.
"A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", Kazuo Itabashi et al, 1991, IEDM, pp. 17.4.1-17.4.4.
"Center Wordline Cell: A New Symmetric Layout Cell for 64 Mb SRAM", I. Naiki et al, 1993, IEDM, pp. 33.3.1-33.3.4.
"A Stacked Split Word-Line (SSW) cell for low voltage operation large capacity, high speed SRAMs", Shuji Ikeda et al, 1993 IEDM, pp. 33.1.1-33.1.4.

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