Silicon-on-insulator body-coupled gated diode for electrostatic

Details Silicon-on-insulator body-coupled gated diode for electrostatic Silicon-on-insulator body-coupled gated diode for electrostatic

1996-10-22

1998-09-22

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2362

Patent

active

058118578

ABSTRACT:
A body-coupled gated diode for silicon-on-insulator (SOI) technology is disclosed. The body-coupled gated diode is formed from an SOI field-effect transistor (FET). The body, gate and drain of the SOI FET are tied together, forming the first terminal of the diode. The source of the SOI FET forms the second terminal of the diode. Both NFETs and PFETs may be used to create the diode. An SOI circuit comprising at least one body-coupled gated diode formed from the SOI FET provides electrostatic discharge (ESD) protection and ideal diode characteristics.

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