SOI combination body tie

Details SOI combination body tie SOI combination body tie

1997-12-29

1998-09-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 66, 257345, 257347, H01L 2941, H01L 2978

Patent

active

058118551

ABSTRACT:
An H-transistor, fabricated in a silicon-on-insulator ("SOI") substrate, includes opposing source and drain terminals or regions flanking a centrally-located body node or well. Above the body node or well is formed the H-shaped gate terminal of the transistor. One or more shunt body contacts or ties bisect the source terminal and connect the source terminal of the transistor to the underlying body node. In this way, the body node or well is no longer electrically "floating", but, instead, is connected to the fixed ground potential of the source terminal of the transistor.

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patent: 5489792 (1996-02-01), Hu et al.
patent: 5536950 (1996-07-01), Liu et al.
patent: 5637899 (1997-06-01), Eimori et al.
patent: 5693959 (1997-12-01), Inoue et al.

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