Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-17
1997-08-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, 257322, H01L 29788
Patent
active
056568398
ABSTRACT:
A semiconductor integrated device having a non-volatile memory element or memory cell of a single-element type in a non-volatile memory circuit employing a field effect transistor which has, in addition to a floating gate electrode for storage of information and a controlling gate electrode, a source which includes a heavily doped region having a depth into the semiconductor substrate extending from the major surface thereof which is large. The single-element type field effect transistor, furthermore, has a drain which includes a lightly doped region which has a depth extending into the semiconductor substrate from the major surface thereof which is small.
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Kamigaki Yoshiaki
Komori Kazuhiro
Kume Hitoshi
Meguro Satoshi
Nishimoto Toshiaki
Crane Sara W.
Hitachi , Ltd.
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