Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1997-04-02

1998-09-22

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438640, 438700, H01L 21441

Patent

active

058113533

ABSTRACT:
A semiconductor device has a semiconductor material substrate, a first insulating film formed on the substrate, a first metallic wiring formed partly on the first insulating film, a second insulating film formed on the first insulating film, a second metallic wiring formed partly on the second insulating film and a via hole for electrically connecting the first metallic wiring and the second metallic wiring. The via hole has a lower portion which extends below the level of a top face of the first metallic wiring and is tapered to help keep the via hole electrically insulated from the substrate.

REFERENCES:
patent: 5441595 (1995-08-01), Yamagata et al.
patent: 5702981 (1997-12-01), Maniar et al.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1621573