Method for manufacturing thin film transistor

Details Method for manufacturing thin film transistor Method for manufacturing thin film transistor

1995-01-17

1998-09-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438595, 438308, H01L 2184

Patent

active

058113266

ABSTRACT:
In a thin film transistor (TFT), a part of a surface or a whole surface of aluminum used as a gate electrode is covered by anodic oxide. In a process after anodization process, ultraviolet light is irradiated to a gate electrode in an oxidizing atmosphere containing oxygen, ozone, or nitrous oxide. Or, in a process after anodization process, a TFT is leaved (placed) in plasma in an oxidizing atmosphere. Or, ultraviolet light is irradiated to a gate electrode in plasma in an oxidizing atmosphere. A substrate temperature is a room temperature (50.degree. C.) to 500.degree. C., for example, 200.degree. to 300.degree. C. By ultraviolet light irradiation or plasma processing, metallic aluminum contained in anodic oxide is oxidized.

REFERENCES:
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5523257 (1996-06-01), Yamazaki et al.
patent: 5545571 (1996-08-01), Yamazaki et al.
patent: 5576231 (1996-11-01), Konuma et al.
patent: 5587330 (1996-12-01), Yamazaki

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