Method of fabricating single-crystal substrates of silicon carbi

Details Method of fabricating single-crystal substrates of silicon carbi Method of fabricating single-crystal substrates of silicon carbi

1984-04-24

1986-11-18

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, C30B 2502

Patent

active

046234250

ABSTRACT:
A method of fabricating SiC single-crystal substrate having a large area and a high quality which is suited to mass production, said method comprises covering the surface of a silicon substrate with a uniform thin film of silicon carbide grown by the CVD method at a low temperature, and thereafter growing a single-crystal film of silicon carbide on the thin film by the CVD method at a higher temperature than in the preceeding step.

REFERENCES:
patent: 3847686 (1974-11-01), Stein
"Chapter 8-The Growth of SiC by Recrystallization and Sublimation", pp. 244-266, Growth Phenomena in Silicon Carbide, vol. 18, No. 3 (1963).
"Growth of Silicon Carbide from Solution", pp. S73-S84, Mat. Res. Bull., vol. 4 (1969).
"Chapter 2-Preparative Procedures", pp. 171-179, Growth Phenomena in Silicon Carbide, vol. 18, No. 3 (1969).
"Some Properties of Vapor Deposited SiC", pp. 1158-1161, J. Electrochem. Soc., vol. 114, No. 11 (1967).
".beta.-Silicon Carbide Films", pp. 1440-1443, J. Electrochem. Soc., vol. 116, No. 11 (1969).
"Growth, Texture, and Surface Morphology of SiC Layers", pp. 1001-1006, J. Electrochem. Soc., vol. 118, No. 6 (1971).
"Vapor-Phase Deposition of Beta-Silicon Carbide on Silicon Substrates", pp. 138-140, J. Electrochem. Soc., vol. 120, No. 1 (1973).

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