Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-25
1998-10-27
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257333, 257334, H01L 29792, H01L 2994
Patent
active
058281010
ABSTRACT:
A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main current directly controlled by the gate electrodes flows in parallel with the surface of the semiconductor and is distributed vertically to the surface of the semiconductor. The width W of the channel is freely increased without regard to the surface area of the semiconductor.
REFERENCES:
patent: 4393391 (1983-07-01), Blanchard
patent: 4796070 (1989-01-01), Black
patent: 4910564 (1990-03-01), Inoue
patent: 4996574 (1991-02-01), Shirasaki
patent: 5016067 (1991-05-01), Mori
patent: 5640034 (1997-06-01), Malhi
Patent Abstracts of Japan, vol. 015, No. 367, (E-1112), Sep. 17, 1991, JP 03 145165, Jun. 20, 1991.
Patent Abstracts of Japan, vol. 010, No. 125, (E-402), May 10, 1986, JP 60 257577, Dec. 19, 1985.
Patent Abstracts of Japan, vol. 013, No. 453, (E-831), Oct. 11, 1989, JP 01 175267, Jul. 11, 1989.
Patent Abstracts of Japan, vol. 014, No. 496, (E-0996), Oct. 29, 1990, JP 02 206173, Aug. 15, 1990.
Patent Abstracts of Japan, vol. 010, No. 376, (E-464), Dec. 13, 1986, JP 61 168968, Jul. 30, 1986.
Patent Abstracts of Japan, vol. 017, No. 583, (E-1452), Oct. 22, 1993, JP 05 175498, Jul. 13, 1993.
Patent Abstracts of Japan, vol. 013, No. 002, (E-700), Jan. 6, 1989, JP 63 215073, Sep. 7, 1988.
Patent Abstracts of Japan, vol. 013, No. 321, (E-790), Jul. 20, 1989, JP 01 089366, Apr. 3, 1989.
Extended Abstracts of the 20.sup.th (1988 International) Conference on Solid State Devices and Materials, pp. 33-36, Aug. 24-26, 1988, Akio Nakagawa, et al., "500V Lateral Double Gate Bipolar-Mode MOSFET(DGIGBT) Dielectrically Isolated by Silicon Wafer Direct-Bonding(DISDB)".
IEEE Transactions on Electron Devices, vol. 38, NR 7, pp. 1650-1654, Jul. 1, 1991, Akio Nakagawa, et al., "Breakdown Voltage Enhancement for Devices on Thin Silicon Layer/Silicon Dioxide Film".
Kabushiki Kaisha Toshiba
Whitehead Carl W.
LandOfFree
Three-terminal semiconductor device and related semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Three-terminal semiconductor device and related semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-terminal semiconductor device and related semiconductor de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1615312