Semiconductor memory device having bipolar and field effect tran

Details Semiconductor memory device having bipolar and field effect tran Semiconductor memory device having bipolar and field effect tran

1995-02-13

1997-12-09

Gossage, Glenn

Static information storage and retrieval

Systems using particular element

Semiconductive

36518905, 365208, 36523006, 326 64, 326 84, 326110, G11C 11407, G11C 11417, H03K 1901, H03K 190175

Patent

active

056967152

ABSTRACT:
A semiconductor integrated circuit memory device has at least two logic blocks, each logic block including at least two logic units and each logic unit having a number of metal oxide semiconductor field effect transistors (MOS FET's) integrated therein. Bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic units so as to shorten a critical path of a logic block. The memory device may include a word driver circuit having a bipolar transistor connected to MOSFETs in an address decoder and memory cells of the memory device. The memory device may also include a sense circuit having a bipolar transistor for high speed discharge of a bit line, as well as an output buffer including a bipolar transistor for reducing signal transmission delays in driving a bus.

REFERENCES:
patent: 3553541 (1971-01-01), King
patent: 3631528 (1971-12-01), Green
patent: 4103188 (1978-07-01), Morton
patent: 4301383 (1981-11-01), Taylor
patent: 4335449 (1982-06-01), Nokubo
Lin et al, "Complementary MOS-Bipolar Transistor Structure", IEEE Transactions on Electron Devices, vol. ED-16, No. 11, Nov. 1969, pp. 945-951.

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