Method and apparatus for forming thin film for liquid crystal di

Details Method and apparatus for forming thin film for liquid crystal di Method and apparatus for forming thin film for liquid crystal di

1996-07-03

1998-10-27

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419226, 20419229, 20429807, 20429825, 20429826, C23C 1434

Patent

active

058274090

ABSTRACT:
A method for forming a thin film for a liquid crystal display by depositing a metal oxide on a transparent substrate surface by reactive sputtering. The method comprises introducing gaseous argon and gaseous oxygen to a space in front of a cathode provided with a target of the respective metal and depositing a thin film comprising the metal oxide on the substrate by reactive sputtering by operating the cathode while moving the substrate parallel to the front side of the target. The gaseous argon and the gaseous oxygen are introduced so that the partial pressure of the gaseous oxygen is lower at the upstream or the downstream side of the moving direction of the substrate. The gaseous oxygen is diluted with gaseous nitrogen to a predetermined ratio. The thin film comprising the metal oxide is deposited while adjusting the metal concentration gradient of the film.
An apparatus for forming a thin film for a liquid crystal display by depositing a metal oxide on a transparent substrate surface by reactive sputtering.

REFERENCES:
patent: 3962062 (1976-06-01), Ingrey
patent: 4309261 (1982-01-01), Harding et al.
patent: 4428812 (1984-01-01), Sproul

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