MOS-type semiconductor integrated circuit device

Details MOS-type semiconductor integrated circuit device MOS-type semiconductor integrated circuit device

1995-09-01

1997-12-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257647, 257648, 257335, 257500, 257509, H01L 2976

Patent

active

056964005

ABSTRACT:
A semiconductor integrated circuit device comprises an input terminal for inputting a voltage, an output terminal for outputting a voltage, a MOS driver disposed between the input terminal and the output terminal for adjusting the voltage of the input terminal and transmitting it to the output terminal, and a MOS control circuit for controlling the MOS driver and feeding back voltage information of the output terminal. Each of the MOS driver and the MOS control circuit has a MOS transistor formed on a semiconductor substrate, and each MOS transistor has a source region, a drain region, a channel region disposed between the source region and the drain region, a gate insulating film disposed over the channel region, and a gate electrode disposed over the gate insulating film. The gate insulating films of the MOS transistors have different film thicknesses.

REFERENCES:
patent: 4214359 (1980-07-01), Kahng
patent: 4866002 (1989-09-01), Shizukuishi et al.
patent: 5105252 (1992-04-01), Kim et al.
patent: 5448101 (1995-09-01), Ono et al.
patent: 5495122 (1996-02-01), Tada
patent: 5497021 (1996-03-01), Tada

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