Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-21
1997-12-09
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 77, 257330, 257331, 257337, H01L 2976, H01L 310312, H01L 2994, H01L 31062
Patent
active
056963963
ABSTRACT:
A vertical MOSFET, which can control AC current flowing through a device only by the gate voltage, is obtained. On an n.sup.+ silicon layer is formed an n.sup.- silicon layer. Within the n.sup.- silicon layer is formed a p-body region. Within the p-body region is formed an n.sup.+ source region. On top of a substrate are formed a source electrode in contact only with the source region and a base electrode in contact only with the p-body region. The source electrode and the base electrode are connected to each other through a resistance at the outside. On a channel region is formed a gate electrode through a gate oxide film (insulating film). When the above semiconductor device is in the reverse bias conduction, the exciting current is controlled only by the gate voltage by setting the current flowing from a source terminal through the resistance to the base electrode, the p-body region and the n.sup.- silicon layer to be negligibly small as compared with the current flowing from the source terminal through the source electrode to the n.sup.+ source region, the channel region and the n.sup.- silicon layer.
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Hara Kunihiko
Miyajima Takeshi
Tokura Norihito
Loke Steven H.
Nippondenso Co. Ltd.
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