Stacked capacitor type semiconductor memory device with good fla

Details Stacked capacitor type semiconductor memory device with good fla Stacked capacitor type semiconductor memory device with good fla

1995-07-28

1997-02-18

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Capacitors

257303, 257304, 257311, H01L 2702

Patent

active

056046960

ABSTRACT:
In a stacked capacitor type semiconductor device, first and second insulating layers are formed on a semiconductor substrate. A capacitor lower electrode layer is formed in an opening formed within the second insulating layer, and is electrically connected via a contact hole of the first insulating layer to an impurity doped region of the semiconductor substrate. A capacitor insulating layer is formed on the capacitor lower electrode layer, and a capacitor upper electrode layer is formed on the capacitor insulating layer.

REFERENCES:
patent: 5162881 (1992-11-01), Ohya
patent: 5247196 (1993-09-01), Kimura
patent: 5274258 (1993-12-01), Ahn

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