Optimal gate control design and fabrication method for lateral f

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

313306, 313309, 313310, H01J 162, H01J 6304, H01J 146, H01J 142

Patent

active

056043996

ABSTRACT:
A lateral field emission device and method of fabricating the device which maximizes gate control of the cathode emitter electric field strength is disclosed. Gate control increases when the position of the gate edge is optimized with respect to the position of the emitter tip. Maximum control is achieved if the gate extends a distance beyond the emitter in the direction of the anode. Preferably, the displacement of the gate edge from the emitter tip is one half the cathode tip-anode distance for optimum control. The high gain device of the present invention provides improved transconductance.

REFERENCES:
patent: 4163949 (1979-08-01), Shelton
patent: 5070282 (1991-12-01), Epsztein
patent: 5079476 (1992-01-01), Kane
patent: 5112436 (1992-05-01), Bol
patent: 5136764 (1992-08-01), Vasquez
patent: 5214346 (1993-05-01), Komatsu
patent: 5214347 (1993-05-01), Gray
patent: 5233263 (1993-08-01), Cronin et al.
patent: 5268648 (1993-12-01), Calcatera
patent: 5308439 (1994-05-01), Cronin et al.
patent: 5312777 (1994-05-01), Cronin et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optimal gate control design and fabrication method for lateral f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optimal gate control design and fabrication method for lateral f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optimal gate control design and fabrication method for lateral f will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1604052

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.