Elimination of tungsten dimple for stacked contact or via applic

Details Elimination of tungsten dimple for stacked contact or via applic Elimination of tungsten dimple for stacked contact or via applic

1996-02-26

1997-08-12

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438629, 438643, H01L 2128

Patent

active

056565453

ABSTRACT:
A method for forming planarized tungsten plugs, for small diameter contact holes, using a RIE etchback process, has been developed. An objective of reducing a seam, inherent when filling holes with chemically vapor deposited materials, was realized by use of a minimum thickness of tungsten, just sufficient to fill the narrow contact hole. The attainment of the reduced tungsten seam was also aided via use of a low temperature deposition, as well as a slow deposition rate.

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patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5422310 (1995-06-01), Ito
patent: 5489552 (1996-02-01), Mechat et al.
patent: 5552340 (1996-09-01), Lee et al.

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