Method for forming an ESD protection device for antifuses with t

Details Method for forming an ESD protection device for antifuses with t Method for forming an ESD protection device for antifuses with t

1996-02-27

1997-08-12

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438954, H01L 2170, H01L 2700

Patent

active

056565348

ABSTRACT:
The present invention is directed to providing an electrostatic discharge ("ESD") protection cell for use in an integrated circuit device including antifuses. The ESD protection cell is formed simultaneously with the antifuses that it protects and provides protection from ESD during the fabrication of the antifuses. The concept is to use thin undoped or doped polysilicon on top of antifuse material as a block etching mask for the formation of the ESD protection cells by using common etching techniques. This polysilicon mask is placed where the antifuses will be and not where the ESD protection cells will be. The polysilicon mask is then merged with a top polysilicon electrode during later processing. During the block etching process, the antifuse material layer is compromised in the region about the ESD protection cells. Where the antifuse material layer is an O--N--O sandwich, the top oxide and nitride layers may be etching during the block etching process leaving the thin bottom oxide layer and some or no residual bottom oxide of the ONO composite antifuse material layer for forming the ESD protection cell. Since etching into the bottom oxide of the ONO composite antifuse material layer will not degrade, but will enhance the ESD protection capability of the ESD protection cell, it is perfectly acceptable to also etch the bottom oxide layer as well as long as proper process control is allowed. The ESD protection cell may be used with antifuses having diffusion or polysilicon type bottom electrodes and polysilicon top electrodes. An advantage of this structure is its ability to be fabricated at high temperature for improved film characteristics and reliability.

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