Method of forming a dynamic random access memory

Details Method of forming a dynamic random access memory Method of forming a dynamic random access memory

1994-12-12

1997-08-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438239, 438459, H01L 2170

Patent

active

056565283

ABSTRACT:
A dynamic random access memory. The memory includes a write transistor N3 and a read transistor N2. In a preferred embodiment the write transistor has a threshold level higher than the read transistor. A sense amplifier senses and amplifies a difference in voltage between a bit line and a sense node that is developed when the read transistor permits or does-not permit current to flow between ground an a bit line. Associated semiconductor device structures and fabrication techniques are also disclosed.

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