Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-03-06
1997-08-12
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438162, 438535, H01L 29786, H01L 21365, H01L 21385, H01L 21428
Patent
active
056565119
ABSTRACT:
A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode on a substrate by using a light-intercepting material; of forming a gate insulating film on the substrate including the gate electrode; of forming a semiconductor layer on the gate insulating film; and of forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed into the semiconductor layer while not being absorbed into the substrate, is irradiated from the back of the substrate, before supplying impurities into the semiconductor layer.
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Canon Kabushiki Kaisha
Wilczewski Mary
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