Method of producing GaAs single crystals doped with boron

Details Method of producing GaAs single crystals doped with boron Method of producing GaAs single crystals doped with boron

1982-09-14

1984-10-23

Lacey, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 156DIG83, C30B 1504

Patent

active

044786751

ABSTRACT:
GaAs single crystals doped with boron and having a lowered dislocation density are grown from a GaAs melt covered with B.sub.2 O.sub.3 melt as a liquid encapsulant. The method comprises using a crucible made of a material selected from the group consisting of PBN, AlN and Al.sub.2 O.sub.3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to the GaAs melt under conditions such that the residual oxygen quantity is at most 5.times.10.sup.-2 mole percent to the GaAs melt, and thereby adjusting the concentration of boron in the grown crystal to 2.times.10.sup.18 to 1.times.10.sup.19 atoms per cm.sup.3. The method is applied to an LE-VB method and an LE-VGF method as well as an LEC method.

REFERENCES:
patent: 2861905 (1958-11-01), Indig et al.
patent: 3533967 (1970-10-01), McNeely et al.
patent: 3630906 (1971-12-01), Willardson et al.
patent: 3725284 (1973-04-01), Touchy
patent: 3741817 (1973-06-01), Bienert et al.
patent: 4299650 (1981-11-01), Bonner
patent: 4303464 (1981-12-01), Suzuki et al.
S. E. Blum et al., Growth of Low Strain GaP by Liquid-Encapsulation, Vertical-Gradient Freeze Technique, Nov. 1972, pp. 588-589.
M. E. Weiner et al., Liquid Encapsulated Czochralski Growth of GaAs, J. Electrochem., Soc. (U.S.A.), vol. 118, No. 2 (Feb. 1971), pp. 301-306.
Conference Proceedings of the IISCG2 Spring School on Crystal Growth and Characterization, Mar. 31-Apr. 7, 1974, pp. 75-87.
T. R. AuCoin et al., Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating Gallium Arsenide, Solid State Technology, Jan. 1979, pp. 59-62.

Affiliated with

Also associated with

Rating

Method of producing GaAs single crystals doped with boron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing GaAs single crystals doped with boron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing GaAs single crystals doped with boron will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1597185