Semiconductor memory device having shallow trench isolation stru

Details Semiconductor memory device having shallow trench isolation stru Semiconductor memory device having shallow trench isolation stru

1998-07-07

2000-05-02

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257397, 257513, H01L 31119

Patent

active

060575808

ABSTRACT:
In a nonvolatile semiconductor memory device, those sides of the gate insulating film and the floating gate electrode which oppose an inner side of a trench are oxidized to form an oxide film. The gate insulating film, the floating gate electrode, and that portion of semiconductor substrate which is near the gate insulating film oppose an insulator made of a first material buried in the trench via another insulator made of a second material difference from the first material buried in the trench. The first material has a low diffusability of impurities, and is, for example, silicon nitride, which effectively suppresses diffusion of impurities from the second material into the gate insulating film.

REFERENCES:
patent: 5064683 (1991-11-01), Poon et al.
patent: 5436488 (1995-07-01), Poon et al.
patent: 5455438 (1995-10-01), Hashimoto et al.
patent: 5646888 (1997-07-01), Mori

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