Transistor structure of ESD protection device

Details Transistor structure of ESD protection device Transistor structure of ESD protection device

1999-05-07

2000-05-02

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257546, H01L 2362

Patent

active

060575794

ABSTRACT:
A transistor structure for an ESD protection device, which includes a gate structure constituted by a connecting part and a plurality of protecting parts on a substrate. The protecting parts include a first protecting part and a second protecting part, wherein the first protecting part is located closer to the middle of the gate structure and the second protecting part is located further from the middle of the gate structure. The width of the second protecting part is larger than that of the first protecting part. There are sources and drains alternated with the protecting parts, wherein the sources include a first isolated from the drain by the first protecting part and a second source isolated from the drain by the second protecting part. The substrate junction is connected to the second source with a butting face and a butting contact is located above the butting face to connect the second source and the substrate junction simultaneously.

REFERENCES:
patent: 5714785 (1998-02-01), Jiang

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