Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-11
2000-05-02
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257532, H01L 2972
Patent
active
060575727
ABSTRACT:
A method for fabricating a semiconductor device using an etching stopper film without increasing a number of steps of photoetching and without degrading the device characteristics. A MOS capacitor having a small coefficient of voltage is formed by forming a thick oxide film which is different from a gate oxide film of a MOS transistor to be formed on the same substrate and by implanting impurity of an amount which will not destroy insulation right under the oxide film. At this time, the electrode of the MOS capacitor is formed by the same layer with that of the gate electrode of the MOS transistor to equalize the height of both the electrodes.
REFERENCES:
patent: 5883408 (1999-03-01), Tsukamoto
Ito Yasushi
Yoshida Kenji
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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