Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-03-19
2000-05-02
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257324, 257326, 257435, H01L 31062, H01L 31113, H01L 29788
Patent
active
060575700
ABSTRACT:
A solid-state image device includes a peripheral having a non-volatile memory transistor 4, which is a transistor of the MNOS type, MONOS type or floating gate type, with a structure in which charge is trapped in insulation means below the gate electrode for varying the threshold voltage, wherein said non-volatile memory transistor is arranged outside image circle 3 on solid-state image device 1 so that light is not incident on the solid-state image device during use.
REFERENCES:
patent: 5773859 (1998-06-01), Ueno
patent: 5815433 (1998-09-01), Takeuchi
Hatano Keisuke
Nakashiba Yasutaka
NEC Corporation
Ngo Ngan V.
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