Solid-state image device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257316, 257324, 257326, 257435, H01L 31062, H01L 31113, H01L 29788

Patent

active

060575700

ABSTRACT:
A solid-state image device includes a peripheral having a non-volatile memory transistor 4, which is a transistor of the MNOS type, MONOS type or floating gate type, with a structure in which charge is trapped in insulation means below the gate electrode for varying the threshold voltage, wherein said non-volatile memory transistor is arranged outside image circle 3 on solid-state image device 1 so that light is not incident on the solid-state image device during use.

REFERENCES:
patent: 5773859 (1998-06-01), Ueno
patent: 5815433 (1998-09-01), Takeuchi

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