Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-31
2000-05-02
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, 438683, 438907, 438908, H01L 214763
Patent
active
060572299
ABSTRACT:
Submicron contact holes in semiconductor bodies are metalized in a single operation. A titanium-rich layer is first deposited, which is followed by a low-resistance TiSi.sub.2 layer. The two layers are thus deposited in one contiguous CVD process inside a single CVD chamber.
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Hieber Konrad
Koerner Heinrich
Treichel Helmuth
Greenberg Laurence A.
Lerner Herbert L.
Niebling John F.
Siemens Aktiengesellschaft
Stemer Werner H.
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