Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-22
2000-05-02
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438108, 438127, 438613, 438614, 438615, 22818021, 22818022, H01L 2144
Patent
active
060572221
ABSTRACT:
Contacts of SAW components are produced which are suitable for flip-chip mounting. Electrically conductive structures on a substrate are tightly encapsulated within a cover and contact pads of the electrically conductive structures are exposed in a window formed in the cover. Solderable layers are vapor deposited onto the contact pads of the electrically conductive structures after the cover is produced.
REFERENCES:
patent: 4737742 (1988-04-01), Takoshima et al.
patent: 5172212 (1992-12-01), Baba
patent: 5329068 (1994-07-01), Hirata et al.
Japanese Patent Abstract No. 58047433 (Masanori), dated Sep. 29, 1984.
Kruger Hans
Pahl Wolfgang
Stelzl Alois
Greenberg Laurence A.
Lerner Herbert L.
Niebling John F.
Siemens Aktiengesellschaft
Stemer Werner H.
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