Method of producing photo mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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060570660

ABSTRACT:
A method of producing a phase shift mask of attenuated type including a step of forming an optical proximity correction in a self-replicating manner in order to weaken side lobe lights by a first phase shift mask of attenuated type including a first pattern, according to which making of data for writing the optical proximity correction at the time of forming by an electron beam lithography system, various transfer tests and/or various optical simulations, and great amount of data for writing in the system are not necessary when the optical proximity correction which is different from in response to each pattern size and/or to each pattern arrangement.

REFERENCES:
patent: 5853923 (1998-12-01), Tzu

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