Method for producing a single crystal

Details Method for producing a single crystal Method for producing a single crystal

Filed on

1980-05-20

Date issued

1983-09-06

Examiner

Bernstein, Hiram H.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

156DIG61, 156DIG105, C30B 704

Type

Patent

Status

active

Patent number

044027877

Description

ABSTRACT:
A single crystal is produced by contacting polycrystal showing a discontinuous crystal grain growth at a temperature not lower than T.degree.C to a seed single crystal having substantially the same crystal structure as the polycrystal and heating the contacted crystals at a temperature (t.degree.C) lower than the temperature T.degree.C to cause a solid phase reaction at an interface between microcrystal grains composing the polycrystal and the seed single crystal, whereby the microcrystal grains in the polycrystal are integrated to the seed single crystal to grow the single crystal.

REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3160521 (1964-12-01), Ziegler et al.
patent: 3348962 (1967-10-01), Grossman et al.
patent: 3350240 (1967-10-01), Higuchi et al.
patent: 3429831 (1969-02-01), Garfinkel et al.
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3655439 (1972-04-01), Seiter
patent: 3694269 (1972-09-01), Bailey et al.
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4057458 (1977-11-01), Maeda et al.
Levesque et al., "Grain Growth in Nickel Ferrites", published in J. of the American Ceramic Soc., vol. 41, #8, Aug. 1958, pp. 300-303.
Budikov et al., "Principles of Solid State Chemistry", 1968, pp. 303-309.

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